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PIN Photodiode Question & Answers

June 25, 2022 By WatElectronics

This article lists 100 PIN Photodiode MCQs for Engineering Students. The PIN Photodiode Questions & Answers below include solutions and links to the relevant topic. This is helpful for users who are preparing for their exams and interviews, or professionals who would like to brush up on the fundamentals of the PIN Photodiode.

The PIN photodiode is one type of photodetector. It is widely used in fiber optic systems because of its small size, high sensitivity, and fast response. The PIN photodetector and avalanche photodiode are the two types of photodiodes.  

If we want to increase the width of the PN junction, we can somehow reduce the diffusion time. We can only increase reverse bias voltage up to a particular point, so that’s why the PIN is designed, so instead of just having a P and N, we create an intrinsic region in the design of the junction itself. 

In PIN photodiode, 'I' is the intrinsic region so that the electron pair is allowed to experience more drift than the diffusion so then the effective time scales can be brought down. The advantages of PIN diodes are they have low noise, low dark current, low bias voltage, and low junction capacitance.

The P-type layer, N-type layer, and I-intrinsic layers are three layers present in PIN photodiodes. In PIN photodiodes the sensitivity is less, the signal-to-noise ratio is poor compared to avalanche photodiodes, and PIN photodiodes have good temperature stability.  

1). Which one of the following are generally gas filled tubes?

Hint
2). What is the standard form of SPAD?

Hint
3). The PN junction offers very low resistance in ________________ bias?

Hint
4). The width of depletion region in PN junction decreases in ____________biasing?

Hint
5). The current in PN junction diode will flow in forward bias due to _____________ carriers?

Hint
6). The effective resistance of PN junction decreases in _______________ bias condition?

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7). The energy of PN junction decreases in _______________ bias condition?

Hint
8). The barrier potential in PN junction diode decreases in ____________ bias condition?

Hint
9). The wave length range of germanium is from ____________ meters?

Hint
10). In which one of the following, photo diodes sensitivity is less?

Hint

Read more about Avalanche Photodiode

11). In which one of the following photodiodes, the signal to noise ratio is poor?

Hint
12). How many layers does PIN photodiodes has?

Hint
13). The figure shown below is a schematic diagram of __________ diode?

PIN Diode Schematic Diagram

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14). The wavelength range of silicon photodetector material is ______________ meters?

Hint
15). The energy gap is ___________ ev in silicon photodetector material?

Hint
16). What is the standard form of PMT?

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17). The wavelength range of lead sulfide material is ______________ meters?

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18). The responsivity of silicon PN type photodetector is ___________________?

Hint
19). How many junctions will be there in general purpose PIN diode?

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20). Which one of the following photo diodes has good temperature stability?

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21). The conversion efficiency of PIN photodiode is ___________________ amperes per watts?

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22). The energy gap is ___________ ev in germanium photodetector material?

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23). Which one of the following diodes can be used for microwave applications?

Add description here!

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24). The silicon PIN photo diode is controlled by ____________?

Hint
25). The wavelength range of germanium photodetector material is ______________ meters?

Hint

PIN Photodiode MCQs for Quiz

26). What is the standard form of SIPM?

Hint
27). Which one of the following is a type of vacuum device?

Hint
28). The responsivity of InGaAs avalanche photodetector is ___________________?

Hint
29). Which one of the following diodes comes under high frequency band (general rectification) diode?

Hint
30). The low reverse bias is required in _____________ type of photo diode?

Hint
31). Which one of the following photo diodes is cheaper?

Hint
32). The energy gap is ___________ ev in GaAs photodetector material?

Hint
33). Which one of the following diodes comes under standard frequency band (general rectification) diode?

Hint
34). How many terminals does silicon PIN photodiode consists?

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35). The typical off capacitance value of silicon PIN photodiode is _____________?

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36). The typical amount of power needed in silicon PIN photodiode is _____________?

Add description here!

Hint
37). The low frequency limit in silicon PIN photodiode is ____________?

Hint
38). In silicon PIN photodiode, the break down voltage is around ________________?

Hint
39). The typical on resistance value of silicon PIN photodiode is _____________?

Hint
40). In which one of the following photodiodes, the response time is less?

Hint
41). The wavelength range of PIN photodiodes is between ____________ micro meters?

Hint
42). The energy gap is ___________ ev in InGaAs photodetector material?

Hint
43). The responsivity of germanium is ___________________ watts?

Hint
44). What is the range of dark current in silicon PN photodetector?

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45). In which one of the following effect, the electric current will generate?

Hint
46). In which one of the following effect, the electrons are emitted?

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47). The reverse current effect damages the junction in _______________ diode?

Hint
48). The break down in Zener diode occurs in ______________ voltages?

Hint
49). What is the standard form of FRD?

Hint
50). In which one of the following photodiodes, the external amplifier is required?

Hint

PIN Photodiode MCQs for Exams

51). The energy gap is ___________ ev in InGaAsP photodetector material?

Hint
52). The figure shown below is a symbol of _______________ phototransistor?

NPN Phototransistor

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53). Which one of the following is a type of solid-state device?

Hint
54). What is the range of dark current in germanium?

Hint
55). The wavelength range of GaAs photodetector material is ______________ meters?

Hint
56). The responsivity of PIN photodiode is around ______________ ampere per watts?

Hint
57). In which one of the following effect the electrons are not emitted?

Hint
58). The rise time of silicon PN type photodetector is _______________ ?

Hint
59). What is the range of dark current in InGaAs avalanche photodetector?

Hint
60). Which one of the following photodiodes doesn’t have high intensity electric field region?

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61). The thermal noise of PIN photodiode is around ______________ watts per hertz?

Hint
62). The dark current of PIN photodiode is around ______________?

Hint
63). Which one of the following is a type of gaseous photodetector?

Hint
64). The wave length range of silicon PN photodetector is from ____________ meters?

Hint
65). In how many modes does photodiodes can operate?

Hint
66). Which one of the following modes is also known as zero bias mode?

Hint
67). In which one of the following bias, the depletion layer is very thin?

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68). The order of current is ___________ amperes in reverse bias PN junction diode?

Hint
69). The magnitude of current is zero in _______________ biased?

Hint
70). Which one of the following photodiodes has exhibit higher noise levels?

Hint
71). The figure shown below is an equivalent circuit of __________ photodiode?

Silicon Photodiode Equivalent Circuit

Hint
72). The rise time of InGaAs avalanche photodetector is _______________ ?

Hint
73). What is the standard form of CCD?

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74). In which one of the following effectl, the electric current will not generate?

Hint
75). The PN junction offers very high resistance in ________________ bias?

Hint

PIN Photodiode MCQs for Interviews

76). The width of depletion region in PN junction increases in ____________biasing?

Hint
77). The current in PN junction diode will flow in reverse bias due to _____________ carriers?

Hint
78). The effective resistance of PN junction increases in _______________ bias condition?

Hint
79). The energy of PN junction increases in _______________ bias condition?

Hint
80). The sensitivity range is from ____________ in PIN photodiode?

Hint
81). The wave length range of InGaAs avalanche photodetector is from ____________ meters?

Hint
82). What is the rise time range of germanium?

Hint
83). The barrier potential in PN junction diode increases in ____________ bias condition?

Hint
84). The order of current is ___________ amperes in forward bias PN junction diode?

Hint
85). The wavelength range of InGaAsP photodetector material is ______________ meters?

Hint
86). The reverse current effect does not damage the junction in _______________ diode?

Hint

Read more about Diodes

87). The break down in PN junction diode occurs in ______________ voltages?

Hint
88). Which one of the following diodes can't be used for microwave applications?

Hint
89). How many junctions will be there in general purpose PN junction diode?

Hint
90). The reverse bias voltage is from ____________ volts in PIN photodiode?

Hint
91). In which one of the following diode, reverse saturation currents is low?

Hint
92). In which one of the following diodes, the depletion diode created?

Hint
93). The forward voltage loss range is between ________________ in Schottky diodes?

Hint
94). In which one of the following diodes, the current flows in one direction?

Hint
95). The wavelength range of indium gallium arsenide photodetector material is ______________ meters?

Hint
96). In how many ways does the PIN photodiode can be constructed?

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97). In which one of the following diodes, the Schottky diode created?

Hint
98). The forward voltage loss range is between ________________ in normal diodes?

Hint
99). How many layers does PIN diode use?

Hint
100). The wavelength region of PIN photodiode is from ___________ nm?

Hint

For More MCQs

  • Semiconductor Diode Questions & Answers
  • Zener Diode Questions & Answers
  • Schottky Diode Questions & Answers
  • Avalanche Photodiode Questions & Answers
  • Tunnel Diode Questions & Answers
  • PN Junction Diode Questions & Answers
  • Varactor Diode Questions & Answers
  • Photodiode Questions & Answers

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