Photodiode Question & Answers June 17, 2022 By WatElectronics This article lists 100 Photodiode MCQs for Engineering Students. All the Photodiode Questions & Answers given below include solutions and links to the relevant topic. This is helpful for users who are preparing for their exams and interviews, or professionals who would like to brush up on the fundamentals of the Photodiode. The photodiode is also a PN junction diode, that has the ability to generate a current when the junction is exposed to light or radiation. When reverse bias potential is applied to a diode then only a minority current will flow through the device and this current is known as a reverse current. So, initially when the junction is not exposed to any type of radiation then only a minority current will flow through the device, and that current is known as a dark current. The dark current flows through the device in the absence of any type of radiation. The minority carriers for the P side are electrons and for the N side are holes. The movement of minority carriers across the junction will generate a small reverse current and this reverse current is known as a dark current. The advantages of photodiodes are it has low resistance, low noise, are lightweight, and have a long life. The disadvantages of photodiode are it needs offset voltage depending on the temperature and it has very low sensitivity. 1). In which one of the following photodiodes, the signal to noise ratio is better? PIN Avalanche Both a and b None of the above Hint 2). What is the standard form of ASE? Amplified Simple Emission Amplified Source Emission Amplified Spontaneous Emission None of the above Hint 3). Which one of the following used in holographic data storage? photorefractive effect Polarization-sensitive photodetectors Photoreceptor cells None of the above Hint 4). The typical active area of photomultiplier tube is from ___________ mm diameter? 25 mm 20-80 mm 1-2 mm None of the above Hint 5). The spectral range of photo emissive (external photoelectric) devices is from ___________? <100 nm – 1650 nm <100 m – 1650 m <100 mm – 1650 mm None of the above Hint 6). Which one of the following is an example for the photovoltaic detector? Si, CCD, CID GaAs, GaN, AiGaN MCP, Vidicon None of the above Hint 7). The dark current in photovoltaic mode is _____________? High Very high Low Very low Hint 8). The figure shown below is a schematic diagram of __________ diode? Schottky Avalanche PIN diode None of the above Hint 9). The number of carriers generated per photon is known as __________ efficiency? Quantum Noise Rectifier None of the above Hint 10). What is the standard from of APD? Avalanche Photodiode Avalanche PIN Photodiode Avalanche Pulse diode None of the above Hint 11). The response time of avalanche photodiode is _____________ that of PIN photo diode? Half that of PIN photodiode Thrice that of PIN photodiode Double that of PIN photodiode None of the above Hint 12). The sensitivity range is from ____________ in Avalanche photodiode? 0-12 dB 1-10 dB 5-15 dB None of the above Hint 13). What is the standard form of PAPR? Peak to Average Power Ratio Peak to Average Peak Ratio Peak to Average Pulse Ratio None of the above Hint 14). Which one of the following is an example for the photoconductive detector? Si, CCD, CID GaAs, GaN, AiGaN MCP, Vidicon None of the above Hint 15). Which one of the following effects was explained by Albert Einstein? Photoelectric effect Compton effect Both a and b None of the above Hint 16). The reverse bias voltage in photoconductive mode will _____________ the dark current? Increases Slight decrease Decreases Constant Hint 17). The ratio of current output divided by incident power is known as __________? Detector responsivity Gain of the signal modifier Quantum efficiency None of the above Hint 18). What is the standard form of UPS? Ultraviolet Photodiode Spectroscopy Ultraviolet Photoelectron Spectroscopy Ultraviolet Photo Spectroscopy None of the above Hint 19). Which one of the following spectroscopies determines molar mass and branches? Mass spectroscopy Infrared spectroscopy NMR spectroscopy None of the above Hint 20). The photodiodes are categorized into ______________ types? One Two Three Four Hint 21). The reverse bias voltage is from ____________ volts in Avalanche photodiode? 5-10 V 1-10 V 5-15 V None of the above Hint 22). The ratio of peak power divided by average power is known as ____________ ratio? PAPR Average power Peak power None of the above Hint 23). The spectral range of internal photoelectric devices is from ___________? <100 nm – 1650 nm <100 m – 1650 m 200 nm – 20 micro meters None of the above Hint 24). Which one of the following is an example for the photo emissive detector? Si, CCD, CID GaAs, GaN, AiGaN MCP, Vidicon None of the above Hint 25). Which one of the following is a low energy phenomenon? Photoelectric effect Compton effect Both a and b None of the above Hint Photodiode MCQs for Quiz 26). The response speed in photoconductive mode __________? High Low Very low None of the above Hint 27). The figure shown below is a schematic diagram of __________ diode? Schottky Avalanche PIN diode None of the above Hint Read more about Schottky Diode 28). The ratio of output potential divided by input current is known as __________? Detector responsivity Gain of the signal modifier Quantum efficiency None of the above Hint 29). What is the standard form of PES? Photodiode Spectroscopy Photoelectron Spectroscopy Photo Spectroscopy None of the above Hint 30). In which one of the following photo diodes the sensitivity is high? PIN Avalanche Both a and b None of the above Hint 31). The wavelength region of avalanche photodiode is from ___________ nm? 300-1100 nm 1-10 nm 400-1000 nm None of the above Hint 32). The spectral range of thermal detector is from ___________ micro meters? <100 nm – 1650 nm <100 m – 1650 m 300 nm – 100 micro meters None of the above Hint 33). The response speed in photovoltaic operation mode __________? High Low Very high None of the above Hint 34). The figure shown below is a circuit diagram of __________ mode? Photovoltaic Photoconductive Avalanche diode None of the above Hint 35). Which one of the following spectroscopies determines functional groups? Mass spectroscopy Infrared spectroscopy NMR spectroscopy None of the above Hint 36). The electrical resistivity of silicon semiconductor is ___________ meters? 10 Ohm 1 mm 10 micros None of the above Hint 37). The melting point of silicon semiconductor material is ___________ degree Celsius? 1414 3265 1234 3456 Hint 38). The seventy-two is the standard atomic weight of ___________ material? Silicon Germanium GaAs None of the above Hint 39). The energy gap is 1.21 at zero degrees kelvin in ___________ material? Silicon Germanium GaAs None of the above Hint 40). Which one of the following photo diodes has poor temperature stability? PIN Avalanche Both a and b None of the above Hint 41). The conversion efficiency of avalanche photodiode is ___________ amps/watt? 0.5 to 1 1 to 2 0.5 to 100 10 to 100 Hint 42). What is the standard form of IM/DD? Intensity Modulation/Direct Detection Internal Modulation/Direct Detection Integral Modulation/Direct Detection None of the above Hint 43). The typical active area of photoconductive detector is from ___________ mm diameter? 25 mm 20-80 micro meters 1-2 mm None of the above Hint 44). What is the standard form of MCT material? Mercury Calcium Telluride Mercury Chloride Telluride Mercury Cadmium Telluride None of the above Hint 45). In how many modes does Shottky photodiode operates? One Two Three Four Hint 46). What are the advantages of photodiodes? Depends on temperature Small active area No high voltage requires None of the above Hint 47). Who invented photodiode and in which year does the photodiode was introduced? Dr. John N. Shive, 1948 Stephen Gray, 1948 Michael Faraday, 1948 None of the above Hint 48). Which one of the following spectroscopies determines types of hydrogens present? Mass spectroscopy Infrared spectroscopy NMR spectroscopy None of the above Hint 49). What is the standard form of XPS? X-ray Photodiode Spectroscopy X-ray Photoelectron Spectroscopy X-ray Photo Spectroscopy None of the above Hint 50). The high reverse bias is required in _____________ type of photo diode? PIN Avalanche Both a and b None of the above Hint Photodiode MCQs for Students 51). The typical active area of thermocouple (thermopile) is from ___________ mm diameter? 10-20 mm 20-80 micro meters 1-2 mm None of the above Hint 52). Which one of the following is a mid-energy phenomenon? Photoelectric effect Compton effect Both a and b None of the above Hint 53). What is the standard form of HgCdTe material? Mercury Calcium Telluride Mercury Chloride Telluride Mercury Cadmium Telluride None of the above Hint 54). The figure shown below is a circuit diagram of __________ mode? Photovoltaic Photoconductive Avalanche diode None of the above Hint 55). What is the standard form of SNMS? Sputtered Neutral Mass Spectrometry Sputtered Neutral Mass Spectroscopy Spectrometry Neutral Mass None of the above Hint 56). Which one of the following measures the absorbance of light? Colorimetry Spectrometry Both a and b None of the above Hint 57). In which one of the following meters the prism is used? Colorimetry Spectrometry Both a and b None of the above Hint 58). Which one of the following meter measures colour and intensity of colour through ligh t? Colorimetry Spectrophotometry Both a and b None of the above Hint 59). Which one of the following meters is more costly? Colorimeter Spectrophotometer Both a and b None of the above Hint 60). In which one of the following photodiodes the response time is more? PIN Avalanche Both a and b None of the above Hint 61). Which one of the following photo diodes is more expensive? PIN Avalanche Both a and b None of the above Hint 62). The typical active area of avalanche photodiode is from ___________ mm diameter? 25 mm 20-80 micro meters 1-3 mm None of the above Hint 63). What is the standard form of InGaAs material? Indium Gallium Antimonide Indium Gallium Arsenide Indium Gallium Antimonide Arsenide None of the above Hint 64). Which one of the following cables is used in the below figure? Shielded cable Metal shielded box Optical fiber None of the above Hint 65). In which one of the following meters the accuracy is more? Colorimeter Spectrophotometer Both a and b None of the above Hint 66). Who invented silicon-controlled rectifier? George Smith Willard Boyle Gordon Hall None of the above Hint 67). Which one of the following materials conducts electric current easily? Insulators Conductors Both a and b None of the above Hint 68). Which one of the following is an example for conductor? Gold Silicon Germanium None of the above Hint 69). Which one of the following spectroscopies uses radio waves? Mass Infrared NMR None of the above Hint 70). In which one of the following photodiodes the external amplifier is not required? PIN Avalanche Both a and b None of the above Hint 71). The wavelength range of avalanche photodiodes is between ____________ micro meters? 0.6 to 1 0.1 to 0.4 0.6 to 1.8 0.6 to 14 Hint 72). The typical active area of bolometer or thermistor is from ___________ mm diameter? 10-20 mm 20-80 micro meters 1-2 mm None of the above Hint 73). The figure shown below is a schematic diagram of __________ mode? Si photodiode Photoconductive Avalanche diode None of the above Hint 74). What is the standard form of RBS? Rutherford Backscattering Spectrometry Rutherford Sputtered Spectroscopy Rutherford Backscattering Sputtered None of the above Hint 75). In which one of the following meters the spectral bandwidth is narrow band? Colorimeter Spectrophotometer Both a and b None of the above Hint Photodiode MCQs for Interviews 76). Which one of the following is an example for semiconductor? Gold Silicon Aluminum None of the above Hint 77). The relative mobility of widely used silicon semiconductor is ___________ cm^2/V-s? 1500 3900 8500 None of the above Hint 78). What are the disadvantages of photodiodes? Depends on temperature Small active area No high voltage requires Both a and b Hint 79). Which one of the following spectroscopies uses infrared radiation? Mass Infrared NMR None of the above Hint 80). Which one of the following photodiodes has high intensity electric field region? PIN Avalanche Both a and b None of the above Hint 81). The typical active area of pyroelectric is from ___________ mm diameter? 10-20 mm 20-80 micro meters 1-2 mm None of the above Hint 82). Which one of the following effects was explained by Arthur Compton? Photoelectric effect Compton effect Both a and b None of the above Hint 83). The figure shown below is a symbol of __________ diode? Zener Schottky Photodiode None of the above Hint 84). What is the standard form of InAsSb material? Indium Arsenide Antimonide Indium Arsenide Silicon Indium Antimonide Arsenide None of the above Hint 85). In which year does the charge coupled devices was invented? 1999 1989 1970 2000 Hint 86). Which one of the following semiconductors has less relative mobility factor? Silicon Germanium GaAs None of the above Hint 87). The speed of operation will be ___________ by using photodiodes? High Very high Low Very low Hint 88). What is the advantage of using PN junction diode? Operates with low voltage source Non-ohmic conductor Both a and b None of the above Hint 89). The relative mobility of widely used germanium semiconductor is ___________ cm^2/V-s? 1500 3900 8500 None of the above Hint 90). Which one of the following photodiodes has exhibit lower noise levels? PIN Avalanche Both a and b None of the above Hint 91). The figure shown below is a schematic diagram of __________ PN junction state? Si photodiode Photoconductive Avalanche diode None of the above Hint 92). The relative mobility of widely used GaAs semiconductor is ___________ cm^2/V-s? 1500 3900 8500 None of the above Hint 93). The electrical resistivity of germanium semiconductor is ___________ meters? 10 mm 1 Ohm 10 micros None of the above Hint 94). The melting point of germanium semiconductor material is ___________ degree Celsius? 1414 3265 1234 938.25 Hint 95). The twenty-eight is the standard atomic weight of ___________ material? Silicon Germanium GaAs None of the above Hint 96). The energy gap is 0.785 at zero degrees kelvin in ___________ material? Silicon Germanium GaAs None of the above Hint 97). In which year the PN junction diodes was invented? 1999 1989 1940 2000 Hint 98). In which one of the following meters the spectral bandwidth is broad band? Colorimeter Spectrophotometer Both a and b None of the above Hint 99). Which one of the following cables is used in the below figure? Shielded cable Metal shielded box Optical Fiber None of the above Hint 100). The typical active area of semiconductor photodiode is from ___________ mm diameter? 25 mm 20-80 mm 1-3 mm None of the above Hint Please fill in the comment box below. Time is Up! Time's up
