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Semiconductor Diode Question & Answers

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This article lists 100+ Semiconductor Diode MCQs for engineering students. All the Semiconductor Diode Questions & Answers given below include a hint and wherever possible link to the relevant topic. This is helpful for the users who are preparing for their exams, interviews, or professionals who would like to brush up their fundamentals on the Semiconductor Diode topic.

To understand the functionality of any electronic device, it is important to analyze the construction and the material present in it.

Based on conduction, the materials are classified as conductors, insulators, and semiconductors. The electric conductivity of semiconductors lies in between insulators and conductors and it is considered to be the essential block of any electronic device.

A diode made up of semiconductors is the basic device used today. Examples of semiconductor diodes are PN junction diode, Zener diode, Schottky diode, Tunnel diode, and so on.

There are various areas of applications of diode including communication systems, computer systems, and power systems, and so on.

1). Diode is made up of ____________ material.
Hintsemiconductor diode
2). Semiconductors are classified as _________________.
HintAddition of impurities and the pure form of material
3). Diode is a ______ device.
HintSingle direction
4). If the applied voltage polarity matches the polarity of diode then it gets turn _______.
HintForward biased
5). Diode turns OFF if the applied voltage polarity is ________ to the diode polarity.
HintReverse biased
6). The junction formed amid anode and cathode in a PN semiconductor diode is ________.
HintRegion initially doesn't consist of any holes or electrons
7). What happens to the diode when the positive voltages are applied at anode?
HintDiodes are forward biased
8). Semiconductors used in the electronic devices construction are _____________.
HintFrequently and the commonly used
9). ___________ semiconductor is less temperature sensitive.
HintMaterial abundantly available on earth
10). ____________ material is the expensive one.
HintGallium arsenide offers to speed up to five times more than that silicon
11). Temperature and conductivity are directly proportional in __________.
HintConductivity tends to decrease with the increase in temperature in conductors
12). Semiconductor undergoing the process of doping are classified as __________.
HintAdding impurities to the material
13). What type of impurities are chosen for doping to form n-type semiconductor?
HintN-type semiconductors
14). How many electrons are present in the valence shell of trivalent impurities?
HintTrivalent impurities
15). The application of external voltage to the terminals of diode is termed as _________.
HintForward bias and reverse bias
16). The majority carrier concentration in N-type material is ____________.
HintMajority concentration of carrier in an N-type material
17). _____________ carriers are formed due to doping.
HintCarriers
18). Saturation current in the diode is caused due to _____________ carriers.
HintMinority carriers
19). Unidirectional behavior of the diode is termed as ________________.
HintConversion of alternating current into direct current
20). The cut in or the Knee voltage of the silicon diode is ___________.
HintForward drop
21). Which diode has the barrier potential of 1.2 Volts?
HintGallium Arsenide made diodes are used when the speed is a major concern
22). The maximum forward current carried by a diode for an indefinite time is ____________.
HintAverage value of the forward current diode
23). __________ is the maximum reverse potential that a diode can withstand.
HintExceptional for Zener diode
24). What are the common reasons of failure in diode?
HintForwarding currents and the reverse breakdown potential
25). ___________ are used to convert AC into DC.
HintApplications concerning power supply
Semiconductor Diode Multiple Choice Question and Answers
26). ________ possess low power ratings in comparison to rectifiers.
HintHigh-frequency application
27). How many diodes a half wave rectifier has?
HintHalf wave rectifier comprises a single diode
28). Half power is wasted in __________ rectifiers?
HintFull-wave rectifiers are designed
29). ____________ rectifier consists of center-tapped transformer.
HintFull-wave rectifiers comprise two diodes
30). Bridge of four resistors can function as a normal _______________.
HintBridge
31). The potential drop in full wave bridge rectifier is ______.
HintTwo diodes crossed in the full-wave circuit
32). The output generated from the rectifier is _________.
HintRectifier output is passed through the filter
33). ____________ are used as filters.
HintInductors and capacitors used for smoothening
34). Voltage Generator is an application of _________.
HintMultiple rectifiers
35). __________ comes under the category of switching diodes.
Hint Clippers and clampers
36). _______ cut down the certain part of the input wave.
HintTo clip a certain part of applied input wave
37). Desired DC level as the outcome can be achieved by _______.
HintRestore DC
38). _________ is connected at the supply source in the clamper circuit to obtain desired outcome.
Hint Capacitors are connected in series with the applied input source
39). Time constant RC is smaller in __________.
HintDiode's small internal resistor
40). Clippers are also known as ______________.
HintDefined level of reference
41). Half wave rectifier is an example of ____________.
HintRectifier either allows positive part or the negative part
42). ________________ can clip negative and the positive cycles of the signal simultaneously.
HintTwo diodes placed in the directions opposite to each other
43). ____________ are known as DC restorers.
HintClamped capacitors
44). PN junction in Zener diode is _______ doped.
HintPN junction of Zener diode is doped heavily
45). Increase in the addition of impurities will __________ the Zener potential.
HintVarying the doping levels
46). Point contact diodes offer __________.
HintCrystal detector technology
47). In PN junction diode, the high levels of electric potential is applied at ____________.
HintP-side of the PN junction is represented as Anode
48). _____________ has the metal-semiconductor junction.
HintMetal-semiconductor junction
49). CCD stands for ______________.
HintPhotodiodes are spaced closely in an array format
50). Which are the diodes conduct in reverse direction?
HintAvalanche and Zener
51). What are the distinct mechanisms of P-N junction breakdown?
HintTwo distinct mechanisms
52). _______ breakdown occurs due to the ionization effect of hole and electron pairs.
HintPN junction is in reverse biasing mode
53). Zener breakdown is occurred due to ___________.
HintHeavily doped P-N junction
54). In ________ diodes gate is shorted to the terminal source.
HintJFETs in which the gate terminal is shorted
55). Point contact diodes are ___________.
HintCrystal technology
56). Diodes formed using semiconductors possessing direct band gaps are known as ______.
HintSuccessive recombination
57). __________ are used in optical communication to achieve high speed.
HintOptical storage purpose
58). Temperature can be monitored using ___________ diodes.
Hint Forward voltages
59). _________ converts the light energy into electric current.
HintPhotodiode resembles a P-N junction diode
60). LEDs generate light only when they are _________ biased.
HintElectrically forward biased
61). The intensity of emitted light from LED is dependent upon the __________ flow.
HintMovement of charged particles
62). Gallium phosphate emits _________ light.
HintGaP emits two different colors
63). The leakage current in photodiode in presence of light ________.
HintLight is absent the leakage current goes negligible
64). Photodiode and LED are combined together to form _________.
HintEmitted light gets hit to the photodiode
65). _____________ diodes are used in Power electronics.
HintCapable of standing high voltages
66).Doping concentration in the crystal diode and the breakdown is ________.
HintBreakdown in the crystal diode can be decreased
67). The Reverse Saturation Current in the diode made of silicon gets doubled for every _______ degree Centigrade.
HintTemperature rises for each 10-degree centigrade
68). For the reverse voltages applied to the diode, it will ______________.
HintBarrier potential
69). When the diode is in ideal condition and forward biased it behaves as ________.
HintDiode behavior resembles the conductor
70). The forward current in the semiconductor diode is due to __________.
HintMajority of carriers
71). Leakage current in the semiconductor diode is contributed by _______-.
HintMinority carrier concentration
72). Temperature and the leakage current of semiconductor diode are _______ to each other.
HintTemperature in the diode increases the leakage current also increases
73). Zener diode is a _______ device.
HintP-N junction diodes
74). Diodes are ___________ devices.
HintLEDs
75). To control current through LED ________ is placed in series.
HintResistor is placed in series

Semiconductor Diode Interview Questions with Answers

76). Visible-light LEDs are _________.
HintIndicators
77). Photodiode response time _________ as the surface area increases.
Hint Photodiodes are sensitive
78). The P-side in the photodiode is a ________.
HintThin n-type semiconductor
79). The intensity of input light in a photodiode and the current at output are _________.
HintIntensity of the light is dependent upon the current generated
80). __________ are photodiodes with larger areas of surfaces.
Hint Solar cells with a large surface area
81). Zener diode is a _______ device.
HintConduct during reverse bias and in forwarding biasconduct during reverse bias and in forwarding bias
82). _________ diode is suited as Amplifiers.
HintTunnel diodes can be used as Microwave amplifiers
83). Materials used in tunnel diode manufacturing are ___________.
HintTunnel diode has fast transitions
84). _________ is known as a Transferred Electron Device.
HintGunn diodes operate with negative resistance
85). ________ consists of only N-type semiconductor material.
HintGunn diodes only have N-type semiconductor material
86). The characteristic curve of the diode shows the relation between _____________.
HintCurrents and voltages of the diode
87). ___________ in the Schottky diode is replaced by the metal.
HintP-type semiconductor
88). Which impurity is chosen for the conversion of intrinsic to p-type extrinsic silicon?
HintTrivalent impurities
89). AM demodulation performed by using _________ diodes.
HintSmaller amplitude waves of AM
90). Diodes characteristics for high frequency applications are ___________.
HintConducting mode
91). Small signal diodes are classified as ____________.
HintSpeed of switching
92). Example of ultra fast diodes is _________.
HintReverse recovery time
93). White light contains multiple wavelengths or frequencies makes it difficult to concentrate or focus at a single point leads to _____________.
HintA lens with a fixed focal length focusing on different wavelengths of color
94). Chromatic aberration can be overcome by using __________.
HintLASER light consists of a single frequency
95). Which diode used the intrinsic layer of semiconductor amid P ad N layers?
HintPIN photodiode is sometimes lightly doped or Undoped N-type
96). Diodes can be tested using __________.
HintMultimeters can be analog or digital
97). __________ class of LASER requires a protective eye wear.
HintHigh-power laser pulsed about 500 mW
98). __________ class of LASER can cause permanent eye damage.
HintVarious medical, scientific, military, and industrial fields
99). LASER diode module is ________ circuit.
HintLASER diode module can sense the self light
100). __________ LASERs are used in DVD and CD players.
HintFamiliar applications
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