Semiconductor Diode Question & AnswersJune 5, 2021 By WatElectronics This article lists 100+ Semiconductor Diode MCQs for engineering students. All the Semiconductor Diode Questions & Answers given below include a hint and wherever possible link to the relevant topic. This is helpful for the users who are preparing for their exams, interviews, or professionals who would like to brush up their fundamentals on the Semiconductor Diode topic.To understand the functionality of any electronic device, it is important to analyze the construction and the material present in it. Based on conduction, the materials are classified as conductors, insulators, and semiconductors. The electric conductivity of semiconductors lies in between insulators and conductors and it is considered to be the essential block of any electronic device. A diode made up of semiconductors is the basic device used today. Examples of semiconductor diodes are PN junction diode, Zener diode, Schottky diode, Tunnel diode, and so on. There are various areas of applications of diode including communication systems, computer systems, and power systems, and so on. 1). Diode is made up of ____________ material.ConductingInsulatingSemiconductingElectronicHintsemiconductor diode 2). Semiconductors are classified as _________________.Intrinsic semiconductorsExtrinsic semiconductorsBoth a & bNone of the aboveHintAddition of impurities and the pure form of material 3). Diode is a ______ device.UnidirectionalBidirectionalNon-linearBoth a and cHintSingle direction 4). If the applied voltage polarity matches the polarity of diode then it gets turn _______.ONOFFFluctuateCan’t sayHintForward biased 5). Diode turns OFF if the applied voltage polarity is ________ to the diode polarity.SimilarMatchesSameOppositeHintReverse biased 6). The junction formed amid anode and cathode in a PN semiconductor diode is ________.SubstrateEmission layerRegion of convergenceDepletion regionHintRegion initially doesn't consist of any holes or electrons 7). What happens to the diode when the positive voltages are applied at anode?Diode gets forward biasedDiode begin to conductDepletion region becomes smallerAll the aboveHintDiodes are forward biased 8). Semiconductors used in the electronic devices construction are _____________.SiliconGermaniumGallium ArsenideAll the aboveHintFrequently and the commonly used 9). ___________ semiconductor is less temperature sensitive.SiliconGermaniumGallium ArsenideAll the aboveHintMaterial abundantly available on earth 10). ____________ material is the expensive one.SiliconGermaniumGallium ArsenideAll the aboveHintGallium arsenide offers to speed up to five times more than that silicon 11). Temperature and conductivity are directly proportional in __________.ConductorsSemiconductorsInsulatorsNone of the aboveHintConductivity tends to decrease with the increase in temperature in conductors 12). Semiconductor undergoing the process of doping are classified as __________.Intrinsic semiconductorsExtrinsic semiconductorsBoth a & bNone of the aboveHintAdding impurities to the material 13). What type of impurities are chosen for doping to form n-type semiconductor?TrivalentTetravalentPentavalentBoth a and cHintN-type semiconductors 14). How many electrons are present in the valence shell of trivalent impurities?TwoThreeFourFiveHintTrivalent impurities 15). The application of external voltage to the terminals of diode is termed as _________.ScatteringPhotonBiasDiffusionHintForward bias and reverse bias 16). The majority carrier concentration in N-type material is ____________.ElectronHolePhotonNeutronHintMajority concentration of carrier in an N-type material 17). _____________ carriers are formed due to doping.MajorityMinorityModerateBoth a and bHintCarriers 18). Saturation current in the diode is caused due to _____________ carriers.MajorityMinorityModerateAll the aboveHintMinority carriers 19). Unidirectional behavior of the diode is termed as ________________.AmplificationRectificationModulationSynchronizationHintConversion of alternating current into direct current 20). The cut in or the Knee voltage of the silicon diode is ___________.0.5 V0.7 V0.8 V1.0 VHintForward drop 21). Which diode has the barrier potential of 1.2 Volts?SiliconGermaniumGallium ArsenideNone of the aboveHintGallium Arsenide made diodes are used when the speed is a major concern 22). The maximum forward current carried by a diode for an indefinite time is ____________.Forward voltage dropAverage forward currentMaximum power dissipationNone of the aboveHintAverage value of the forward current diode 23). __________ is the maximum reverse potential that a diode can withstand.Forward voltage dropAverage forward currentMaximum power dissipationPeak reverse voltageHintExceptional for Zener diode 24). What are the common reasons of failure in diode?Excess forward currentReverse breakdown voltagePower dissipationBoth a & bHintForwarding currents and the reverse breakdown potential 25). ___________ are used to convert AC into DC.Rectifier diodesSwitching diodesTunnel diodesVaractor diodesHintApplications concerning power supply Semiconductor Diode Multiple Choice Question and Answers 26). ________ possess low power ratings in comparison to rectifiers.Schottky diodesSwitching diodesTunnel diodesVaractor diodesHintHigh-frequency application 27). How many diodes a half wave rectifier has?OneTwoThreeFourHintHalf wave rectifier comprises a single diode 28). Half power is wasted in __________ rectifiers?Half waveFull waveBoth a and bNone of the aboveHintFull-wave rectifiers are designed 29). ____________ rectifier consists of center-tapped transformer.Half waveFull waveBoth a and bNone of the aboveHintFull-wave rectifiers comprise two diodes 30). Bridge of four resistors can function as a normal _______________.AntennaAmplifierTransformerRectifierHintBridge 31). The potential drop in full wave bridge rectifier is ______.1.1 V1.2 V1.3 V1.4 VHintTwo diodes crossed in the full-wave circuit 32). The output generated from the rectifier is _________.FilteredRippledDistortedScatteredHintRectifier output is passed through the filter 33). ____________ are used as filters.ResistorsCapacitorsInductorsBoth b and cHintInductors and capacitors used for smoothening 34). Voltage Generator is an application of _________.Rectifier diodesSwitching diodesTunnel diodesVaractor diodesHintMultiple rectifiers 35). __________ comes under the category of switching diodes.ClippersAmplifiersClampersBoth a and cHint Clippers and clampers 36). _______ cut down the certain part of the input wave.ClippersAmplifiersClampersBoth a and cHintTo clip a certain part of applied input wave 37). Desired DC level as the outcome can be achieved by _______.ClippersAmplifiersClampersBoth a and cHintRestore DC 38). _________ is connected at the supply source in the clamper circuit to obtain desired outcome.ResistorsCapacitorsInductorsBoth b and cHint Capacitors are connected in series with the applied input source 39). Time constant RC is smaller in __________.ClippersAmplifiersClampersBoth a and cHintDiode's small internal resistor 40). Clippers are also known as ______________.LimitersSlicersAmplitude selectorsAll the aboveHintDefined level of reference 41). Half wave rectifier is an example of ____________.ClippersAmplifiersClampersBoth a and cHintRectifier either allows positive part or the negative part 42). ________________ can clip negative and the positive cycles of the signal simultaneously.Serial biased clippersAmplifiersClampersParallel biased clippersHintTwo diodes placed in the directions opposite to each other 43). ____________ are known as DC restorers.ClippersAmplifiersClampersBoth a and cHintClamped capacitors 44). PN junction in Zener diode is _______ doped.LightlyHeavilyModeratelyNone of the aboveHintPN junction of Zener diode is doped heavily 45). Increase in the addition of impurities will __________ the Zener potential.IncreaseDecreaseNeither increase nor decreaseCannot sayHintVarying the doping levels 46). Point contact diodes offer __________.Low capacitanceHigh forward resistanceGreater reverse leakagesAll the aboveHintCrystal detector technology 47). In PN junction diode, the high levels of electric potential is applied at ____________.AnodeCathodeP-sideBoth a and cHintP-side of the PN junction is represented as Anode 48). _____________ has the metal-semiconductor junction.Rectifier diodesSwitching diodesTunnel diodesSchottky diodesHintMetal-semiconductor junction 49). CCD stands for ______________.Charge coupled deviceCharge constant deviceCapacitor coupled deviceCapacitance charged deviceHintPhotodiodes are spaced closely in an array format 50). Which are the diodes conduct in reverse direction?Zener diodeAvalanche diodePN diodesBoth a and bHintAvalanche and Zener 51). What are the distinct mechanisms of P-N junction breakdown?Avalanche BreakdownZener BreakdownBoth a and bEither a or bHintTwo distinct mechanisms 52). _______ breakdown occurs due to the ionization effect of hole and electron pairs.Avalanche BreakdownZener BreakdownBoth a and bEither a or bHintPN junction is in reverse biasing mode 53). Zener breakdown is occurred due to ___________.Ionization of hole and electron pairsHeavy dopingWidth of depletion region is thinBoth b and cHintHeavily doped P-N junction 54). In ________ diodes gate is shorted to the terminal source.ZenerAvalanchePNConstant-currentHintJFETs in which the gate terminal is shorted 55). Point contact diodes are ___________.Zener diodesCrystal diodesPN diodesConstant-current diodesHintCrystal technology 56). Diodes formed using semiconductors possessing direct band gaps are known as ______.Light emitting diodesCrystal diodesPN diodesConstant-current diodesHintSuccessive recombination 57). __________ are used in optical communication to achieve high speed.Light emitting diodesCrystal diodesLASER diodesConstant-current diodesHintOptical storage purpose 58). Temperature can be monitored using ___________ diodes.Light emitting diodesThermal diodesLASER diodesPhotodiodesHint Forward voltages 59). _________ converts the light energy into electric current.Light emitting diodesThermal diodesLASER diodesPhotodiodesHintPhotodiode resembles a P-N junction diode 60). LEDs generate light only when they are _________ biased.ForwardReverseNeutralIdealHintElectrically forward biased 61). The intensity of emitted light from LED is dependent upon the __________ flow.VoltageCurrentRaysPhotonHintMovement of charged particles 62). Gallium phosphate emits _________ light.RedGreenYellowBoth a and bHintGaP emits two different colors 63). The leakage current in photodiode in presence of light ________.IncreasesDecreasesNegligibleCan be ignoredHintLight is absent the leakage current goes negligible 64). Photodiode and LED are combined together to form _________.Zener diodeAvalanche diodePN diodesOptocouplerHintEmitted light gets hit to the photodiode 65). _____________ diodes are used in Power electronics.Light emitting diodesPIN diodesLASER diodesPhotodiodesHintCapable of standing high voltages 66).Doping concentration in the crystal diode and the breakdown is ________.Directly proportionalInversely proportionalEither increase or decreaseCannot sayHintBreakdown in the crystal diode can be decreased 67). The Reverse Saturation Current in the diode made of silicon gets doubled for every _______ degree Centigrade.5101520HintTemperature rises for each 10-degree centigrade 68). For the reverse voltages applied to the diode, it will ______________.Raise the barrier potentialLowers the barrier potentialIncreases the majority carrier concentrationNone of the aboveHintBarrier potential 69). When the diode is in ideal condition and forward biased it behaves as ________.ConductorInsulatorResistorNone of the aboveHintDiode behavior resembles the conductor 70). The forward current in the semiconductor diode is due to __________.Majority carriersMinority carriersResistanceCapacitance at junctionHintMajority of carriers 71). Leakage current in the semiconductor diode is contributed by _______-.Majority carriersMinority carriersResistanceCapacitance at junctionHintMinority carrier concentration 72). Temperature and the leakage current of semiconductor diode are _______ to each other.Directly proportionalInversely proportionalEither increase or decreaseCannot sayHintTemperature in the diode increases the leakage current also increases 73). Zener diode is a _______ device.LinearAmplifyingNon-linearBoth a and cHintP-N junction diodes 74). Diodes are ___________ devices.Voltage dependentCurrent dependentLinearNone of the aboveHintLEDs 75). To control current through LED ________ is placed in series.ResistorInductorCapacitorAmmeterHintResistor is placed in seriesSemiconductor Diode Interview Questions with Answers 76). Visible-light LEDs are _________.InexpensiveDurableExpensiveBoth a and bHintIndicators 77). Photodiode response time _________ as the surface area increases.Speed upSlowsIncreasesCannot determineHint Photodiodes are sensitive 78). The P-side in the photodiode is a ________.AnodeCathodeNeutralVoltage sourceHintThin n-type semiconductor 79). The intensity of input light in a photodiode and the current at output are _________.LinearAmplifyingNon-linearBoth a and cHintIntensity of the light is dependent upon the current generated 80). __________ are photodiodes with larger areas of surfaces.Solar cellsAvalanche photodiodePIN diodeSchottky photodiodeHint Solar cells with a large surface area 81). Zener diode is a _______ device.UnidirectionalNon-LinearBidirectionalBoth b and cHintConduct during reverse bias and in forwarding biasconduct during reverse bias and in forwarding bias 82). _________ diode is suited as Amplifiers.Rectifier diodesSwitching diodesTunnel diodesVaractor diodesHintTunnel diodes can be used as Microwave amplifiers 83). Materials used in tunnel diode manufacturing are ___________.SiliconGermaniumZincBoth a and bHintTunnel diode has fast transitions 84). _________ is known as a Transferred Electron Device.Light emitting diodePIN diodeLASER diodesGunn diodeHintGunn diodes operate with negative resistance 85). ________ consists of only N-type semiconductor material.Light emitting diodePIN diodeLASER diodesGunn diodeHintGunn diodes only have N-type semiconductor material 86). The characteristic curve of the diode shows the relation between _____________.Current and VoltageVoltage and ResistanceVoltage and PowerResistance and TemperatureHintCurrents and voltages of the diode 87). ___________ in the Schottky diode is replaced by the metal.AnodeCathodeBoth a and bResistorHintP-type semiconductor 88). Which impurity is chosen for the conversion of intrinsic to p-type extrinsic silicon?AluminumGermaniumZincArsenicHintTrivalent impurities 89). AM demodulation performed by using _________ diodes.Light emitting diodeSchottky diodeLASER diodesGunn diodeHintSmaller amplitude waves of AM 90). Diodes characteristics for high frequency applications are ___________.Low junction capacitanceShort reverse recovery timeFast transitionsAll the aboveHintConducting mode 91). Small signal diodes are classified as ____________.Fast diodesVery fast diodesUltra fast diodesBoth a and cHintSpeed of switching 92). Example of ultra fast diodes is _________.Light emitting diodeSchottky diodeLASER diodesGunn diodeHintReverse recovery time 93). White light contains multiple wavelengths or frequencies makes it difficult to concentrate or focus at a single point leads to _____________.ScatteringDiffusionTotal Internal ReflectionChromatic aberrationHintA lens with a fixed focal length focusing on different wavelengths of color 94). Chromatic aberration can be overcome by using __________.Light emitting diodeSchottky diodeLASER diodesGunn diodeHintLASER light consists of a single frequency 95). Which diode used the intrinsic layer of semiconductor amid P ad N layers?Light emitting diodePIN diodeLASER diodesGunn diodeHintPIN photodiode is sometimes lightly doped or Undoped N-type 96). Diodes can be tested using __________.AmmeterVoltmeterMulti meterNone of the aboveHintMultimeters can be analog or digital 97). __________ class of LASER requires a protective eye wear.Class 1Class 1MClass 3RClass 3BHintHigh-power laser pulsed about 500 mW 98). __________ class of LASER can cause permanent eye damage.Class 3RClass 1MClass 2Class 4HintVarious medical, scientific, military, and industrial fields 99). LASER diode module is ________ circuit.Self-regulatingNon-regulatingSelf-mixingBoth a and cHintLASER diode module can sense the self light 100). __________ LASERs are used in DVD and CD players.Low powerHigh powerBoth a and bNone of the aboveHintFamiliar applications Read More About Semiconductor Diode Time is Up!
