Semiconductor Diode Question & Answers June 5, 2021 By WatElectronics This article lists 100+ Semiconductor Diode MCQs for engineering students. All the Semiconductor Diode Questions & Answers given below include a hint and wherever possible link to the relevant topic. This is helpful for the users who are preparing for their exams, interviews, or professionals who would like to brush up their fundamentals on the Semiconductor Diode topic. To understand the functionality of any electronic device, it is important to analyze the construction and the material present in it. Based on conduction, the materials are classified as conductors, insulators, and semiconductors. The electric conductivity of semiconductors lies in between insulators and conductors and it is considered to be the essential block of any electronic device. A diode made up of semiconductors is the basic device used today. Examples of semiconductor diodes are PN junction diode, Zener diode, Schottky diode, Tunnel diode, and so on. There are various areas of applications of diode including communication systems, computer systems, and power systems, and so on. 1). Diode is made up of ____________ material. Conducting Insulating Semiconducting Electronic None Hint 2). Semiconductors are classified as _________________. Intrinsic semiconductors Extrinsic semiconductors Both a & b None of the above None Hint 3). Diode is a ______ device. Unidirectional Bidirectional Non-linear Both a and c None Hint 4). If the applied voltage polarity matches the polarity of diode then it gets turn _______. ON OFF Fluctuate Can’t say None Hint 5). Diode turns OFF if the applied voltage polarity is ________ to the diode polarity. Similar Matches Same Opposite None Hint 6). The junction formed amid anode and cathode in a PN semiconductor diode is ________. Substrate Emission layer Region of convergence Depletion region None Hint 7). What happens to the diode when the positive voltages are applied at anode? Diode gets forward biased Diode begin to conduct Depletion region becomes smaller All the above None Hint 8). Semiconductors used in the electronic devices construction are _____________. Silicon Germanium Gallium Arsenide All the above None Hint 9). ___________ semiconductor is less temperature sensitive. Silicon Germanium Gallium Arsenide All the above None Hint 10). ____________ material is the expensive one. Silicon Germanium Gallium Arsenide All the above None Hint 11). Temperature and conductivity are directly proportional in __________. Conductors Semiconductors Insulators None of the above None Hint 12). Semiconductor undergoing the process of doping are classified as __________. Intrinsic semiconductors Extrinsic semiconductors Both a & b None of the above None Hint 13). What type of impurities are chosen for doping to form n-type semiconductor? Trivalent Tetravalent Pentavalent Both a and c None Hint 14). How many electrons are present in the valence shell of trivalent impurities? Two Three Four Five None Hint 15). The application of external voltage to the terminals of diode is termed as _________. Scattering Photon Bias Diffusion None Hint 16). The majority carrier concentration in N-type material is ____________. Electron Hole Photon Neutron None Hint 17). _____________ carriers are formed due to doping. Majority Minority Moderate Both a and b None Hint 18). Saturation current in the diode is caused due to _____________ carriers. Majority Minority Moderate All the above None Hint 19). Unidirectional behavior of the diode is termed as ________________. Amplification Rectification Modulation Synchronization None Hint 20). The cut in or the Knee voltage of the silicon diode is ___________. 0.5 V 0.7 V 0.8 V 1.0 V None Hint 21). Which diode has the barrier potential of 1.2 Volts? Silicon Germanium Gallium Arsenide None of the above None Hint 22). The maximum forward current carried by a diode for an indefinite time is ____________. Forward voltage drop Average forward current Maximum power dissipation None of the above None Hint 23). __________ is the maximum reverse potential that a diode can withstand. Forward voltage drop Average forward current Maximum power dissipation Peak reverse voltage None Hint 24). What are the common reasons of failure in diode? Excess forward current Reverse breakdown voltage Power dissipation Both a & b None Hint 25). ___________ are used to convert AC into DC. Rectifier diodes Switching diodes Tunnel diodes Varactor diodes None Hint Semiconductor Diode Multiple Choice Question and Answers 26). ________ possess low power ratings in comparison to rectifiers. Schottky diodes Switching diodes Tunnel diodes Varactor diodes None Hint 27). How many diodes a half wave rectifier has? One Two Three Four None Hint 28). Half power is wasted in __________ rectifiers? Half wave Full wave Both a and b None of the above None Hint 29). ____________ rectifier consists of center-tapped transformer. Half wave Full wave Both a and b None of the above None Hint 30). Bridge of four resistors can function as a normal _______________. Antenna Amplifier Transformer Rectifier None Hint 31). The potential drop in full wave bridge rectifier is ______. 1.1 V 1.2 V 1.3 V 1.4 V None Hint 32). The output generated from the rectifier is _________. Filtered Rippled Distorted Scattered None Hint 33). ____________ are used as filters. Resistors Capacitors Inductors Both b and c None Hint 34). Voltage Generator is an application of _________. Rectifier diodes Switching diodes Tunnel diodes Varactor diodes None Hint 35). __________ comes under the category of switching diodes. Clippers Amplifiers Clampers Both a and c None Hint 36). _______ cut down the certain part of the input wave. Clippers Amplifiers Clampers Both a and c None Hint 37). Desired DC level as the outcome can be achieved by _______. Clippers Amplifiers Clampers Both a and c None Hint 38). _________ is connected at the supply source in the clamper circuit to obtain desired outcome. Resistors Capacitors Inductors Both b and c None Hint 39). Time constant RC is smaller in __________. Clippers Amplifiers Clampers Both a and c None Hint 40). Clippers are also known as ______________. Limiters Slicers Amplitude selectors All the above None Hint 41). Half wave rectifier is an example of ____________. Clippers Amplifiers Clampers Both a and c None Hint 42). ________________ can clip negative and the positive cycles of the signal simultaneously. Serial biased clippers Amplifiers Clampers Parallel biased clippers None Hint 43). ____________ are known as DC restorers. Clippers Amplifiers Clampers Both a and c None Hint 44). PN junction in Zener diode is _______ doped. Lightly Heavily Moderately None of the above None Hint 45). Increase in the addition of impurities will __________ the Zener potential. Increase Decrease Neither increase nor decrease Cannot say None Hint 46). Point contact diodes offer __________. Low capacitance High forward resistance Greater reverse leakages All the above None Hint 47). In PN junction diode, the high levels of electric potential is applied at ____________. Anode Cathode P-side Both a and c None Hint 48). _____________ has the metal-semiconductor junction. Rectifier diodes Switching diodes Tunnel diodes Schottky diodes None Hint 49). CCD stands for ______________. Charge coupled device Charge constant device Capacitor coupled device Capacitance charged device None Hint 50). Which are the diodes conduct in reverse direction? Zener diode Avalanche diode PN diodes Both a and b None Hint 51). What are the distinct mechanisms of P-N junction breakdown? Avalanche Breakdown Zener Breakdown Both a and b Either a or b None Hint 52). _______ breakdown occurs due to the ionization effect of hole and electron pairs. Avalanche Breakdown Zener Breakdown Both a and b Either a or b None Hint 53). Zener breakdown is occurred due to ___________. Ionization of hole and electron pairs Heavy doping Width of depletion region is thin Both b and c None Hint 54). In ________ diodes gate is shorted to the terminal source. Zener Avalanche PN Constant-current None Hint 55). Point contact diodes are ___________. Zener diodes Crystal diodes PN diodes Constant-current diodes None Hint 56). Diodes formed using semiconductors possessing direct band gaps are known as ______. Light emitting diodes Crystal diodes PN diodes Constant-current diodes None Hint 57). __________ are used in optical communication to achieve high speed. Light emitting diodes Crystal diodes LASER diodes Constant-current diodes None Hint 58). Temperature can be monitored using ___________ diodes. Light emitting diodes Thermal diodes LASER diodes Photodiodes None Hint 59). _________ converts the light energy into electric current. Light emitting diodes Thermal diodes LASER diodes Photodiodes None Hint 60). LEDs generate light only when they are _________ biased. Forward Reverse Neutral Ideal None Hint 61). The intensity of emitted light from LED is dependent upon the __________ flow. Voltage Current Rays Photon None Hint 62). Gallium phosphate emits _________ light. Red Green Yellow Both a and b None Hint 63). The leakage current in photodiode in presence of light ________. Increases Decreases Negligible Can be ignored None Hint 64). Photodiode and LED are combined together to form _________. Zener diode Avalanche diode PN diodes Optocoupler None Hint 65). _____________ diodes are used in Power electronics. Light emitting diodes PIN diodes LASER diodes Photodiodes None Hint 66).Doping concentration in the crystal diode and the breakdown is ________. Directly proportional Inversely proportional Either increase or decrease Cannot say None Hint 67). The Reverse Saturation Current in the diode made of silicon gets doubled for every _______ degree Centigrade. 5 10 15 20 None Hint 68). For the reverse voltages applied to the diode, it will ______________. Raise the barrier potential Lowers the barrier potential Increases the majority carrier concentration None of the above None Hint 69). When the diode is in ideal condition and forward biased it behaves as ________. Conductor Insulator Resistor None of the above None Hint 70). The forward current in the semiconductor diode is due to __________. Majority carriers Minority carriers Resistance Capacitance at junction None Hint 71). Leakage current in the semiconductor diode is contributed by _______-. Majority carriers Minority carriers Resistance Capacitance at junction None Hint 72). Temperature and the leakage current of semiconductor diode are _______ to each other. Directly proportional Inversely proportional Either increase or decrease Cannot say None Hint 73). Zener diode is a _______ device. Linear Amplifying Non-linear Both a and c None Hint 74). Diodes are ___________ devices. Voltage dependent Current dependent Linear None of the above None Hint 75). To control current through LED ________ is placed in series. Resistor Inductor Capacitor Ammeter None Hint Semiconductor Diode Interview Questions with Answers 76). Visible-light LEDs are _________. Inexpensive Durable Expensive Both a and b None Hint 77). Photodiode response time _________ as the surface area increases. Speed up Slows Increases Cannot determine None Hint 78). The P-side in the photodiode is a ________. Anode Cathode Neutral Voltage source None Hint 79). The intensity of input light in a photodiode and the current at output are _________. Linear Amplifying Non-linear Both a and c None Hint 80). __________ are photodiodes with larger areas of surfaces. Solar cells Avalanche photodiode PIN diode Schottky photodiode None Hint 81). Zener diode is a _______ device. Unidirectional Non-Linear Bidirectional Both b and c None Hint 82). _________ diode is suited as Amplifiers. Rectifier diodes Switching diodes Tunnel diodes Varactor diodes None Hint 83). Materials used in tunnel diode manufacturing are ___________. Silicon Germanium Zinc Both a and b None Hint 84). _________ is known as a Transferred Electron Device. Light emitting diode PIN diode LASER diodes Gunn diode None Hint 85). ________ consists of only N-type semiconductor material. Light emitting diode PIN diode LASER diodes Gunn diode None Hint 86). The characteristic curve of the diode shows the relation between _____________. Current and Voltage Voltage and Resistance Voltage and Power Resistance and Temperature None Hint 87). ___________ in the Schottky diode is replaced by the metal. Anode Cathode Both a and b Resistor None Hint 88). Which impurity is chosen for the conversion of intrinsic to p-type extrinsic silicon? Aluminum Germanium Zinc Arsenic None Hint 89). AM demodulation performed by using _________ diodes. Light emitting diode Schottky diode LASER diodes Gunn diode None Hint 90). Diodes characteristics for high frequency applications are ___________. Low junction capacitance Short reverse recovery time Fast transitions All the above None Hint 91). Small signal diodes are classified as ____________. Fast diodes Very fast diodes Ultra fast diodes Both a and c None Hint 92). Example of ultra fast diodes is _________. Light emitting diode Schottky diode LASER diodes Gunn diode None Hint 93). White light contains multiple wavelengths or frequencies makes it difficult to concentrate or focus at a single point leads to _____________. Scattering Diffusion Total Internal Reflection Chromatic aberration None Hint 94). Chromatic aberration can be overcome by using __________. Light emitting diode Schottky diode LASER diodes Gunn diode None Hint 95). Which diode used the intrinsic layer of semiconductor amid P ad N layers? Light emitting diode PIN diode LASER diodes Gunn diode None Hint 96). Diodes can be tested using __________. Ammeter Voltmeter Multi meter None of the above None Hint 97). __________ class of LASER requires a protective eye wear. Class 1 Class 1M Class 3R Class 3B None Hint 98). __________ class of LASER can cause permanent eye damage. Class 3R Class 1M Class 2 Class 4 None Hint 99). LASER diode module is ________ circuit. Self-regulating Non-regulating Self-mixing Both a and c None Hint 100). __________ LASERs are used in DVD and CD players. Low power High power Both a and b None of the above None Hint Read More About Semiconductor Diode None Time's up
