A power transistor is a three-terminal device like an emitter, base & collector and is composed of semiconductor materials. These transistors are mainly designed for controlling high current to voltage ratings of electrical devices. So, MJ & MJE series high-power transistors are used mostly for audio amplifier-based applications. There are most popular MJ and MJE series power transistors available in the market like; MJ802, MJL21193, MJL21194, MJ1000, MJ1000, MJ15016, and MJE172, MJE182, MJE340, MJE350, MJE700, MJE800, MJE2955T, MJE3055T, MJE4343, etc. This article provides brief information on the MJE2955T transistor, pinout, specifications, and its applications.
What is MJE2955T Transistor?
The MJE2955T is a general-purpose silicon Epitaxial-Base PNP power transistor in the Jedec TO-220 package. This transistor is housed within a hermetically closed metal box. This device can be used as a general-purpose switching & amplifier device.
MJE2955T is an extremely adaptable transistor that can be utilized within various applications. This can be used within high-power conditions wherever high power loads should be controlled. The frequency range of these transistors is quite limited, so it is mainly used in amplifiers, although it can also be utilized as a preamplifier mainly for a power amplifier phase in some conditions.
MJE2955T Transistor
While looking for a suitable transistor for your application based on a few factors, it is very important to look into a few points on How to Select a Transistor.
MJE2955T Pin Configuration:
The pin configuration of the MJE2955T transistor is shown below. This transistor includes three terminals like a BJT which are discussed below.
MJE2955T Transistor Pin Configuration
- Pin-1 (Base): This terminal controls the transistor biasing.
- Pin-2 (Collector): This pin emits electrons which are received by the collector terminal.
- Pin-3 (Emitter): The electrons emitted from the emitter terminal move into the primary PN junction.
Features & Specifications:
The features and specifications of the MJE2955T transistor include the following.
- MJE2955T is a PNP Bi-Polar Power Transistor.
- The mounting type is through-hole.
- The package or Case is TO-2203
- It includes three pins.
- Pb−free packages are accessible.
- It has a high current gain bandwidth.
- The material of this PNP transistor is Si.
- It is available in the TO-220 package.
- Maximum DC gain or hFE is 100.
- Its continuous collector current or IC is 10A.
- The emitter to base voltage or VBE is 5V.
- The base current or IB maximum is 6A.
- Collector dissipation is 75W.
- The transition frequency is 2MHz.
- The noise figure is from 2 to 10 dB.
- Collector capacitance is 8.5 pF.
- Maximum voltage from collector to base or |Vcb| is 60 V.
- Maximum DC gain is 10 amps.
- Maximum operating junction temperature or Tj is 175 °Centigrade.
- Its operating & storage junction ranges from -55 to +150 °Centigrade.
- MSL or Moisture Sensitivity Level is 1 (Unlimited).
- The part number of the base is MJE2955.
- It has a single-element configuration.
- Height x Length x Width is 9.28mm x 10.28mm x 4.82mm.
- RoHS status is Non-RoHS Compliant.
- The packaging type is Tube.
- Part status is obsolete.
Equivalent and Complementary MJE2955T Transistors
The Equivalent MJE2955T Transistors are; 2N5987, MJE1291, 2N5988 & NTE183. The complementary MJE2955T transistor is MJE3055T. Replacing a suitable transistor in any circuit based on requirement is very important. To know how to replace it, please refer to this; Replacing Transistors in Electronic Circuits: Factors and Considerations.
MJE2955T Transistor Circuit
The simple MJE2955T transistor circuit is shown below which is used to control the motor. The transistor used in this circuit is PNP type.
This transistor is an extremely adaptable component in a different range of applications. So it is used within high-power situations where maximum power lodes should be controlled. This transistor’s frequency range is fairly limited, which is why it is primarily employed in amplifiers, but it can also be used as a preamplifier for a power amplifier stage in some situations.
MJE2955T Transistor Circuit
So both the emitter and collector terminals will be forward-biased or closed whenever the base terminal is held at the GND. It will be reverse-biased or opened whenever the base terminal is connected to GND. This will differ as compared to an NPN transistor.
MJE2955T transistor is connected in a common emitter (CE) configuration to drive a high-power load such as a motor. In primary conditions, the button will be within an open circuit state, so there is no flow of current throughout the base terminal. This transistor works as an open circuit with no base current & the whole voltage supply ‘V1’ will not show across it.
Connecting a base resistor to the base terminal of the transistor is mandatory to avoid it being damaged. Please refer to this link for; Choosing Base Resistance for Transistors in Electronic Circuits.
How to use MJE2955T safely in a Circuit for a Long Time?
To use the MJE2955T transistor very safely in a circuit for a long time, we have to follow its specifications which we have mentioned above. So its continuous collector current should not be above 10A, max voltage from C to B or |Vcb| must be 60V. Its emitter to base voltage must be 5V and its base current should not increase to 6A. It must be operated and stored between > -55 to < +150 °Centigrade.
Transistors can also be interfaced to a microcontroller. Know how to interface with a microcontroller
Advantages & Disadvantages
The advantages of the MJE2955T transistor include the following.
- It is a general-purpose power transistor.
- This transistor is highly adaptable and used in a broad range of applications.
- It provides reliable operation.
The disadvantages of the MJE2955T transistor include the following.
- There are two disadvantages of the power handling capacity of a transistor; average junction temperature & second breakdown.
- This silicon PNP-based power transistor is specially designed for only general-purpose amplifiers & power-switching circuits.
Applications
The applications of the MJE2955T transistor include the following.
- MJE2955T transistor is used in high-power conditions wherever high-power-based lodes should be controlled.
- This transistor can be used as a general-purpose amplifier & switching device.
- This is a PNP-based Si power transistor that is used for power switching circuits & general-purpose-based amplifiers.
- This transistor is used in regulator circuits, SMPS, signal amplifiers, and PWM applications.
- This PNP transistor is used within different devices & projects.
- This general-purpose electronic component is used in different high-power-based projects.
- It can be used as a preamplifier within amplifier circuits.
- These are used within amplifier projects because their frequency range is limited.
- It is used in high-power-based applications wherever amplification (or) switching of the PNP transistor is necessary.
Please refer to this link for the MJE2955T transistor datasheet.
Thus, this is an overview of the MJE2955T transistor, including pinout, features, specifications, circuit, advantages, disadvantages, and applications. This NPN-based epitaxial-base transistor is made with silicon material and available in the Jedec TO-220 package. MJE2955T transistor is intended for general-purpose amplifiers & power-switching circuits. Quick switching times & extremely low saturation voltage result in reduced conduction & switching losses. Here is a question for you, what is MJE3055T transistor?