Gunn Diode Question & Answers June 29, 2022 By WatElectronics This article lists 50 Gunn Diode MCQs for Engineering Students. The Gunn Diode Questions & Answers below include solutions and links to the relevant topic. This is helpful for users who are preparing for their exams and interviews, or professionals who would like to brush up on the fundamentals of the Gunn Diode. The Gunn diode is a three-layered device that is made up of N-type semiconductors on all three layers. The N+, N, and N+ are the three layers, where N+ is the heavily doped and N substrate is lightly dopped material. The N+ layers are the substrate of GaAs and n is the active layer. The Gunn oscillation mode, stable amplification mode, LSA oscillation, and bias circuit oscillation modes are the modes of operation of Gunn diodes. When we give external supply voltage to the Gunn diode the electrons from the valence band move to the conduction band and whenever the external voltage increases from the conduction band the electrons move to the higher energy so that the current reaches the peak point. The charge carriers are immobile in higher energy bands so that the transfer of electrons from conduction to higher energy band is known as the transfer of electrons and that’s why we call Gunn diode a TED. The Gunn diode offers negative resistance characteristics that mean it generates power. The theory of transistor is not applicable to the Gunn diode because it is a junction diode, and it is made with compound components such as GaAs, InP, and CdTe materials. 1). Which one of the following diodes consists only N-type semiconductor materials? PN junction diode Gunn diode Both a and b None of the above Hint 2). Which one of the following diodes has N+, n, N+ materials? PN junction diode Gunn diode Both a and b None of the above Hint 3). Which type of material is used for Gunn diode? Gallium arsenide Gallium nitride Both a and b None of the above Hint 4). What are the advantages of Gunn diode? Low noise High RF power Low frequency operation None of the above Hint 5). What is the standard form of LSA? Limited Space Charge Accumulation Limited Space Coil Accumulation Limited Simple Charge Accumulation None of the above Hint 6). The GaAs and InP materials in a Gunn diode consist of ______________ conduction band valleys? One Two Three Four Hint 7). How many layers does Gunn diode has? One Two Three Four Hint 8). Which one of the following layers is heavily doped in Gunn diode? P-type N+ type N type None of the above Hint 9). Which one of the following layers is substrate of GaAs in Gunn diode? P-type N+ type N type None of the above Hint 10). The Gunn diodes are made with ______________ components? GaAs InP CdTe All of the above Hint 14). What is the standard form of RWH? Ridley Watkins Hilsum Ridley Watt Hilsum Ridley Watkins Hartley None of the above Hint 15). The figure shown below is a symbol of ________________ diode? Gunn diode Zener diode PN junction diode None of the above Hint 16). How many heavily doped layers are used in Gunn diode construction? One Two Three Four Hint 17). The noise figure of Gunn diode is around ______________ decibels? 15 20 32 56 Hint 18). The gain bandwidth product of Gunn diode is around ______________ decibels? >10 dB <10 dB >200 dB None of the above Hint 19). What is the standard form of IMPATT? Impact Ionization Avalanche Transit Time Impact Ionization Avalanche Transit Impact Ionization Avalanche Time None of the above Hint 20). The efficiency of trapped plasma avalanche transit time is _______________? 20-60% 5-6% 5-7% 5-8% Hint Gunn Diode MCQs for Quiz 21). The twin lead is an example for _____________ transmission lines? Differential Single ended Both a and b None of the above Hint 22). The operating frequency is up to _______________ in limited space charge? 100 GHz 200 GHz 300 GHz None of the above Hint 23). The pulsed output power is ______________ watts in limited space charge? > 100 < 100 > 700 < 500 Hint 24). The frequency is between ______________ GHz in transit time? 100 GHz 200 GHz 1 GHz to 18 GHz None of the above Hint 25). The frequency limitation of Gunn type microwave semiconductor device is _______________ GHz? 100 GHz 200 GHz <140 GHz None of the above Hint 26). The frequency limitation of impact ionization avalanche transit time is _______________ GHz? 100 GHz 200 GHz <300 GHz None of the above Hint 27). In which one of the following diodes the doping levels are very high? Tunnel Conventional Both a and b None of the above Hint 28). What is the standard form of TVS? Transient Voltage Suppressor Time Voltage Suppressor Transient Voltage Supply None of the above Hint 29). The coaxial cable is an example for _____________ transmission lines? Differential Single ended Both a and b None of the above Hint 30). Which one of the following layers is active layer in Gunn diode? P-type N+ type N type None of the above Hint Gunn Diode MCQs for Exams 31). The figure shown below is a circuit diagram of _______________ diode? Gunn diode Zener diode PN junction diode None of the above Hint Read more about Diodes 32). The average gain of Gunn diode is around ______________ decibels? >10 dB <10 dB 1-12 dB None of the above Hint 33). In which of the following diode, depletion region will not form? PN junction diode Gunn diode Both a and b None of the above Hint 34). Which one of the following layers is lightly doped in Gunn diode? P-type N+ type N type None of the above Hint Read more about Gunn Diode 35). The power of Gunn diode is between ______________ hertz? 1 Watts 2 Watts None of the above Hint 36). What is the standard form of ATT? Avalanche Transit Avalanche Time Transit Avalanche Transit Time None of the above Hint 37). The efficiency of impact ionization avalanche transit time is _______________? 5-10% 5-6% 5-7% 5-8% Hint 38). The output power is _______________ watts in transit time? <2 watts 8 watts 10 watts 25 watts Hint 39). The frequency limitation of FET and HEMT is _______________ GHz? <100 GHz 200 GHz <300 GHz None of the above Hint 40). In which year, the first transferred electron effect was published? 1999 1961 1898 2000 Hint Gunn Diode MCQs for Interviews 41). In which one of the following diodes, the reverse breakdown voltage is low? Conventional Zener Diode array None of the above Hint 42). Which one of the following diodes offers infinite resistance? Ideal Practical Both a and b None of the above Hint 43). In which one of the following class, the capacitance is low? Conventional Zener Diode array None of the above Hint 44). In which one of the following class, the capacitance is very high? Conventional Zener Diode array None of the above Hint 45). Which one of the following devices is an active device? Switches Samplers Transistors All of the above Hint 46). Which one of the following devices is a passive microwave device? Duplexers Couplers Dividers All of the above Hint 47). Which one of the following microwave devices doesn’t use DC power? Active Passive Both a and b None of the above Hint 48). In which one of the following diodes, the reverse breakdown voltage is very high? Conventional Zener Diode array None of the above Hint 49). What is the standard form of TRAPATT? Trapped Plasma Avalanche Transit Time Trapped Plasma Avalanche Transit Trapped Plasma Avalanche Time None of the above Hint 50). Which one of the following diodes doesn’t consists only P-type semiconductor materials? PN junction diode Gunn diode Both a and b None of the above Hint For More MCQs Semiconductor Diode Questions & Answers Zener Diode Questions & Answers Schottky DiodeQuestions & Answers Avalanche Photodiode Questions & Answers Tunnel Diode Questions & Answers PN Junction Diode Questions & Answers Varactor Diode Questions & Answers Photodiode Questions & Answers PIN Photodiode Questions & Answers Ideal Diode Questions & Answers Please fill in the comment box below. Time is Up! Time's up
