• Home
  • Articles
  • Basics
  • Components
  • Projects
  • Communications
  • MCQ

WatElectronics.com

You are here: Home / MCQ / Gunn Diode Question & Answers

Gunn Diode Question & Answers

June 29, 2022 By WatElectronics

This article lists 50 Gunn Diode MCQs for Engineering Students. The Gunn Diode Questions & Answers below include solutions and links to the relevant topic. This is helpful for users who are preparing for their exams and interviews, or professionals who would like to brush up on the fundamentals of the Gunn Diode.

The Gunn diode is a three-layered device that is made up of N-type semiconductors on all three layers. The N+, N, and N+ are the three layers, where N+ is the heavily doped and N substrate is lightly dopped material. The N+ layers are the substrate of GaAs and n is the active layer.  

The Gunn oscillation mode, stable amplification mode, LSA oscillation, and bias circuit oscillation modes are the modes of operation of Gunn diodes. When we give external supply voltage to the Gunn diode the electrons from the valence band move to the conduction band and whenever the external voltage increases from the conduction band the electrons move to the higher energy so that the current reaches the peak point. 

The charge carriers are immobile in higher energy bands so that the transfer of electrons from conduction to higher energy band is known as the transfer of electrons and that’s why we call Gunn diode a TED. 

The Gunn diode offers negative resistance characteristics that mean it generates power. The theory of transistor is not applicable to the Gunn diode because it is a junction diode, and it is made with compound components such as GaAs, InP, and CdTe materials. 

1). Which one of the following diodes consists only N-type semiconductor materials?

Hint
2). Which one of the following diodes has N+, n, N+ materials?

Hint
3). Which type of material is used for Gunn diode?

Hint
4). What are the advantages of Gunn diode?

Hint
5). What is the standard form of LSA?

Hint
6). The GaAs and InP materials in a Gunn diode consist of ______________ conduction band valleys?

Hint
7). How many layers does Gunn diode has?

Hint
8). Which one of the following layers is heavily doped in Gunn diode?

Hint
9). Which one of the following layers is substrate of GaAs in Gunn diode?

Hint
10). The Gunn diodes are made with ______________ components?

Hint
14). What is the standard form of RWH?

Hint
15). The figure shown below is a symbol of ________________ diode?

Gunn Diode Symbol

Hint
16). How many heavily doped layers are used in Gunn diode construction?

Hint
17). The noise figure of Gunn diode is around ______________ decibels?

Hint
18). The gain bandwidth product of Gunn diode is around ______________ decibels?

Hint
19). What is the standard form of IMPATT?

Hint
20). The efficiency of trapped plasma avalanche transit time is _______________?

Hint

Gunn Diode MCQs for Quiz

21). The twin lead is an example for _____________ transmission lines?

Hint
22). The operating frequency is up to _______________ in limited space charge?

Hint
23). The pulsed output power is ______________ watts in limited space charge?

Hint
24). The frequency is between ______________ GHz in transit time?

Hint
25). The frequency limitation of Gunn type microwave semiconductor device is _______________ GHz?

Hint
26). The frequency limitation of impact ionization avalanche transit time is _______________ GHz?

Hint
27). In which one of the following diodes the doping levels are very high?

Hint
28). What is the standard form of TVS?

Hint
29). The coaxial cable is an example for _____________ transmission lines?

Hint
30). Which one of the following layers is active layer in Gunn diode?

Hint

Gunn Diode MCQs for Exams

31). The figure shown below is a circuit diagram of _______________ diode?

Gunn Diode Oscillator Circuit

Hint
Read more about Diodes
32). The average gain of Gunn diode is around ______________ decibels?

Hint
33). In which of the following diode, depletion region will not form?

Hint
34). Which one of the following layers is lightly doped in Gunn diode?

Hint
Read more about Gunn Diode
35). The power of Gunn diode is between ______________ hertz?

Hint
36). What is the standard form of ATT?

Hint
37). The efficiency of impact ionization avalanche transit time is _______________?

Hint
38). The output power is _______________ watts in transit time?

Hint
39). The frequency limitation of FET and HEMT is _______________ GHz?

Hint
40). In which year, the first transferred electron effect was published?

Hint

Gunn Diode MCQs for Interviews

41). In which one of the following diodes, the reverse breakdown voltage is low?

Hint
42). Which one of the following diodes offers infinite resistance?

Hint
43). In which one of the following class, the capacitance is low?

Hint
44). In which one of the following class, the capacitance is very high?

Hint
45). Which one of the following devices is an active device?

Hint
46). Which one of the following devices is a passive microwave device?

Hint
47). Which one of the following microwave devices doesn’t use DC power?

Hint
48). In which one of the following diodes, the reverse breakdown voltage is very high?

Hint
49). What is the standard form of TRAPATT?

Hint
50). Which one of the following diodes doesn’t consists only P-type semiconductor materials?

Hint

For More MCQs

  • Semiconductor Diode Questions & Answers
  • Zener Diode Questions & Answers
  • Schottky DiodeQuestions & Answers
  • Avalanche Photodiode Questions & Answers
  • Tunnel Diode Questions & Answers
  • PN Junction Diode Questions & Answers
  • Varactor Diode Questions & Answers
  • Photodiode Questions & Answers
  • PIN Photodiode Questions & Answers
  • Ideal Diode Questions & Answers
clock.png

Time is Up!

clock.png

Time's up

Recent Posts

  • IRF840 MOSFET : Pin Configuration, Specifications, Circuit & Its Applications
  • 2N5457 N-channel JFET : Pin Configuration, Specifications, Circuit & Its Applications
  • FDV301N MOSFET: Pin Configuration, Specifications, Circuit & Its Applications
  • MCP3008 ADC : Pin Configuration, Specifications, Interfacing & Its Applications
  • MSP430 Launchpad : Pin Configuration, Features, Interfacing & Its Applications
  • HC-06 Bluetooth Module : Pin Configuration, Set up, Interfacing & Its Applications
  • DS3231 RTC Module : Pin Configuration, Specifications, Interfacing with Microcontroller & Its Applications
  • IRF3205 MOSFET : Pin Configuration, Specifications, Circuit & Its Applications
  • Allen Bradley PLC : Architecture, Working, Types & Its Applications
  • Pentium Processor : Architecture, Working, Vs Pentium Pro, & Its Applications
  • Preamplifier : Circuit, Working, Types, Differences & Its Applications
  • Occupancy Sensor : Working, Circuit, Types & Its Applications

Categories

  • Articles (20)
  • Basics (112)
  • Communications (53)
  • Components (58)
  • Digital Electronics (41)
  • Digital Signalling (3)
  • Electronics (197)
  • Embedded Systems (11)
  • Magnetism (5)
  • Microprocessors (3)
  • Modulation (1)
  • Projects (15)

Subscribe to Our Newsletter

Don’t miss these articles!

We don’t spam! Read our privacy policy for more info.

Check your inbox or spam folder to confirm your subscription.

Category

  • Electronics
  • Components
  • Digital Electronics
  • Embedded Systems
  • Projects

Copyright © 2021 · WatElectronics.com | Contact Us | Privacy Policy