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Field Effect Transistors Question & Answers

May 31, 2021 By WatElectronics

This article lists 100+ Field-Effect Transistor MCQs for engineering students. All the Field-Effect Transistor Questions & Answers given below includes solution and link wherever possible to the relevant topic.

FET ( Field Effect Transistor) is one of the most important semiconductor devices. The main purpose of the design of FET is to overcome the limitation of BJT where there exists an emitter junction thus leading to low impedance level during forward bias conditions which further injects high noise level.

A FET is a 3 terminal device consisting of Source, drain, and gate as the terminals. Where the source is the input terminal, drain is the output terminal and the gate is the mid terminal. The operation of FET mainly depends on either of the carriers that is either holes or electrons.

They are classified into many types depending on the design characteristics such as JFET, MOSFET, Potential divider FET, etc. Where each of these FET operate in different regions according to their characteristics.  Additionally a FET can be used as switching device operating in 3 regions namely active, saturation and cut-off regions.

As compared to BJT, the FET has many advantages like better thermal stability, predicts less noise, can be used at high frequencies, and has high input impedance, because of these advantages the FET is preferred over BJT in many applications like integrated circuits, digital switch, amplifiers, amplitude modulation, etc.

1). How many terminals does the FET transistor have?

Hint
2). The field-effect transistors used in ________

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3). The field-effect transistors has _________

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4). Which one is a unipolar device?

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5). The operation of the BJT relies on _________

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6). How many types of FETs are there?

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Read more about Field Effect Transistor
7). The current in FET flows between __________ terminals

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8). What are the terminals of FET?

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9). How many types of MOSFETs are there?

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10). How many types of JFETs are there?

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11). What are the terminals of BJT?

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12). The advantages of FET are _________

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13). Which channel JFET consists of an N-type channel and two heavily dopped P-region?

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14). Which one is a current controlled device?

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15). In JFET the gate current is equal to _________

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16). In BJT, the input voltage is equal to ________

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17). Which one is a linear amplifier?

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18). Which one is a bipolar device?

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19). The operation of FET relies on _________

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20). Which channel JFET consists of a P-type channel and two heavily dopped N-region?

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21). Which one -s a voltage-controlled device?

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22). In BJT the input resistance is lower due to ________

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23). The noise level in BJT is _________

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24). Which one is a non-linear amplifier?

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25). What are the terminals of insulated gate bipolar transistor?

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Field Effect Transistor Important MCQs

26).The insulated gate bipolar transistor used in _________

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27). In FET the input resistance is higher due to ____________

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28). In FET the noise level is ________

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29). The maximum voltage rating of BJT is between ________

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30). The maximum voltage rating of MOSFET is ________

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31). The maximum voltage rating of IGBT is ________

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32). The operating frequency of BJT is _______

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33). What are the advantages of the MOSFET dosimeter?

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34). The maximum current rating of IGBT is _______

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35). The operating frequency of the MOSFET is _________

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36). What are the disadvantages of MOSFET dosimeter?

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37). The characteristics of JFET are divided into _____ parts

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38). _______________ characteristics gives the relationship between drain current and drain to source voltage for different values of the gate to source voltage

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39). The maximum current rating of BJT is ____________

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40). In drain characteristics when drain to source voltage is increased in the ohmic region then the drain current _________

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41). Who invented FETs?

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42). _________ is a metal-insulator semiconductor

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43). _________ is a metal semiconductor

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44). The maximum current rating of MOSFET is _________

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45). The breakdown voltage of 1µm MESFET is about ________

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46). In FET configuration the voltage gain of the common gate is __________

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47). In FET configuration the current gain of the common gate is __________

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48). In FET configuration the input-output phase relationship of the common gate is __________

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49). The electrical gate oxide thickness of GNRFET is around ______

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50). The electrical gate oxide thickness of N-type MOSFET is around ______

Hint

Field Effect Transistor Important MCQs with Hints

51). ________ characteristics give the relationship between drain current and gate to source voltage for different values of drain to source voltage

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52). In FET configuration the voltage gain of the common drain is __________

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53). In FET configuration the current gain of the common drain is __________

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54). In FET configuration the input-output phase relationship of the common drain is __________

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55). The electrical gate oxide thickness of P-type MOSFET is around ______

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56). The value of the sub threshold swing of GNRFET is _________

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57). The value of the drain induced barrier lowering of GNRFET is __________

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58). The value of the sub threshold swing of N-type MOSFET is _________

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59). The value of the drain induced barrier lowering of N-type MOSFET is __________

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60). The switching frequency of BJT is around ______

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61). The on-state voltage drop of BJT is between ___________

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62). The voltage ratings of BJT is around ______

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63). The voltage ratings of MOSFET is around ______

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64). The voltage gain of the common source in FET is ________

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65). In FET configuration the current gain of the common source is ___________

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66). In FET configuration the input-output phase relationship of the common source is __________

Hint
67). The value of the sub threshold swing of P-type MOSFET is _________

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68). The value of the drain induced barrier lowering of P-type MOSFET is __________

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69). The voltage rating of IGBT is ____________

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70). The switching frequency of MOSFET is ________

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71). The on-state voltage drop of IGBT is between ________

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72). The switching frequency of IGBT is __________

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73). How many types of OFET sensors are there?

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74). Which is used as a gate insulator in SG-FET?

Hint
75). Which is used as a gate insulator in FE-FET?

Hint

Field Effect Transistor MCQs for Exams

76). Which one is a gas-sensitive FET?

Hint
77). For ammonia, at 300 degrees the response time of silicon carbide FET is below _______

Hint
78). For hydrogen, at 550 degrees the response time of sic-FET is below _______

Hint
79). The gas sensors that are based on silicon carbide FETs are used up to _______

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80). The JFET pinc-off voltage is about _________

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81). The input impedance is high in _______

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82). Which one is having the lowest noise level?

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83). In which region JFET acts like resistance?

Hint
84). An N-channel JFET _________ are the charge carriers

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85). In which region JFET is used normally?

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86). In which mode JFET can operate?

Hint
Read more about JFET
87). The JFET characteristics are similar to __________

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88). The channel length of tunnel TFET is ___________

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89). The gate oxide thickness of the tunnel TFET is around _________

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90). How many types of band-to-band tunneling are there?

Hint
91). Fin field-effect transistor are used to design __________

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92). MOSFET drives __________ current in saturation region

Hint
93). Who invented BJT?

Hint
94). In which year the BJT transistors are invented?

Hint
Read more about Bipolar Junction Transistor
95). The width range of MOSFET is around ______

Hint
96). The threshold voltage is _________ in enhancement type metal oxide semiconductor field effect transistor

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97). ___________ type of MOSFET can be used as a switch

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98). How many P-N junctions are there in MOSFET?

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99). In which type of MOSFET the threshold voltage is negative?

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Read more about MOSFET
100). What is the standard form of MIGFET?

Hint

Field Effect Transistor MCQs for Quiz

101). When MOSFET conductance is one then MOSFET is __________

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102). The linear resistance of the MOSFET controlled by ___________

Hint
103). The fin field-effect transistor always have __________

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104). The length of MOSFET is in the range of ________

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105). The fin field-effect transistor is a _______ transistor

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106). The gain in MOSFET is always ____________

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107). MOSFET is a _____ device

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108). In MOSFET, the induced channel is also known as __________

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109). The flex FET is a _________ MOSFET

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110). The gate current is _____ in IGFET

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111). The MOSFET will OFF when conductance is ______

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112). How many P-regions and N-regions does the P-N-P transistor have?

Hint
113). ______ is a point of reference in JFET

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114). What are the main disadvantages of field-effect transistor?

Hint
115). The resistance of FET increases with ______ of temperature

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116). In which region does FET operate for an amplifier?

Hint
117). The trans-conductance of field-effect transistor depends on ________

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118). In ohmic region the field-effect transistor used as voltage variable ________

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119). In a field-effect transistor the gate is ________

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120). For a junction field-effect transistor the drain current remains _______ above the pinch-off voltage

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121). The common drain amplifier voltage gain is always ___________

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122). The input impedance of the common gate amplifier is __________

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123). In a filed-effect transistor the channel is ________

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124). _______ is a foundation of N-channel depletion type MOSFET

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125). What is the standard form of CNFET?

Hint

Field Effect Transistor MCQs for Students

126). The channel length of the FINFET is around _______

Hint
127). The effective channel length of FINFET is around _______

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128). The thickness of FIN in FINFET is around _______

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129). In FINFET the height of the FIN is around ________

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130). In FINFET the oxide thickness is about ________

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131). What is the standard form of IGFINFET?

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132). What is the standard form of SB-CNFET?

Hint
133). The supply voltage of non-optimized CNFET is _______

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134). The CNT diameter of non-optimized CNFET is around __________

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135). The gate oxide thickness of non-optimized CNFET is around __________

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136). The CNT pitch of non-optimized CNFET is around __________

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137). The number of CNT’s in CNFET is ________

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138). The work function contact of CNFET is around _________

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139). What is the standard form of ISFET?

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140). What is the standard form of MMFET?

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141). Through which pin current flows?

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142). Which pin controls the biasing of the Field-Effect Transistor?

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143). What are the applications of MPF102 JFET?

Hint
144). The drain-source voltage of MPF102 JFET is around ________

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145). The maximum drain current of MPF102 JFET is around ______

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146). The drain gate voltage of MPF102 JFET is _______

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147). The silicon body thickness of TFET is about ______

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148). The gate length of the TFET is around ________

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149). The gate work function of TFET is around _______

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150). The gate-source overlap of TFET is around _________

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151). In which field-effect transistor the gate is not insulated from the channel?

Hint
152). Which FET cannot operate in enhancement and depletion mode?

Hint
153). The channel length of N-type junction less SOI ISFET is _________

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154). The channel thickness of N-type junction less SOI ISFET is _________

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155). The gate oxide thickness of N-type junction less SOI ISFET is _________

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156). The bipolar transistors are _________

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157). The MOSFET transistors are _______

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158). Which FET use in low noise applications?

Hint
159). In D-MOSFET the silicon oxide layer present between _______

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160). The channel width of N-type junction less SOI ISFET is _________

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161). The box thickness of N-type junction less SOI ISFET is _________

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The box thickness of N-type junction less SOI ISFET is 145nm

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163). The standard form of DM-FET is _________

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164). The supply voltage of optimized CNFET is around _______

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165). In optimized CNTFET, the CNT diameter is around ____________

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166). In optimized CNTFET, the oxide thickness is around ____________

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167). What is the standard form of DM-TEFT?

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168). How many types of DG-TFETs are there?

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169). In optimized CNTFET, the CNT pitch is around ____________

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170). In optimized CNTFET, the number of CNTs are ____________

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Field Effect Transistor MCQs for Interviews

171). In optimized CNTFET, the work function constant is ____________

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172). What is the standard form of CFET?

Hint
173). The channel length of N-type conventional SOI ISFET is _______

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174). In which FET the channel is present?

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Read more about FET
175). The channel thickness of N-type conventional SOI ISFET is _______

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176). In DMOSFET the gate to source voltage is _________

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177). In EMOSFET the gate to source voltage is _________

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178). The gate oxide thickness of N-type conventional SOI ISFET is _______

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179). The channel width of N-type conventional SOI ISFET is _______

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180). The box thickness of N-type conventional SOI ISFET is _______

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181). The drain current in DMOSFET increases when the gate to source voltage becomes _______

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182). The drain current in EMOSFET increases when gate to source voltage becomes _______

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183). The stern layer thickness of N-type conventional SOI ISFET is _______

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184). In EMOSFET the silicon oxide layer present between _________

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185). What is the standard form of MISFET?

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186). The MOSFET is _______

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187). What is the standard form of NEMFET?

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188). Which transistor uses an insulator between body and gate?

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189). Which transistor uses an organic semiconductor in its channel?

Hint
190). Which transistor combines gold nano-material and organic transistor?

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191). What is the standard form of NOMFET?

Hint
192). In BJT which one controls the flow of current?

Hint
193). In BJT the current comes in from _________

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194). In BJT the current goes out from _________

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195). How many methods are there for EMOSFET biasing?

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196). In how many ways JFET can be connected to a circuit?

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197). __________ are the parameters of JFET

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198). The JFET has ________

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Read more about JFET
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